The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Sep. 15, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Wei Cao, Fremont, CA (US);

Dengtao Zhao, Los Gatos, CA (US);

Peng Zhang, San Jose, CA (US);

Xiang Yang, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06562 (2013.01);
Abstract

A block of non-volatile memory cells is divided into a first sub-block and a second sub-block. Programming non-volatile memory cells of the second sub-block after programming non-volatile memory cells of the first sub-block comprises boosting unselected channels in the second sub-block to a boosted condition; prior to boosting unselected channels in the second sub-block to the boosted condition, boosting unselected channels in the first sub-block to the boosted condition to pre-charge the channels of the second sub-block; and applying a program voltage to a selected word line of the second sub-block while channels in the first sub-block are in the boosted condition and channels in the first sub-block are in the boosted condition.


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