The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Sep. 26, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Xiang Yang, Santa Clara, CA (US);
Masaaki Higashitani, Cupertino, CA (US);
Abhijith Prakash, Milpitas, CA (US);
Dengtao Zhao, Los Gatos, CA (US);
Assignee:
SanDisk Technologies LLC, Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/3445 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06562 (2013.01);
Abstract
A non-volatile memory system comprises a plurality of non-volatile memory cells divided into three or more tiers. The memory cells can be programmed, erased and read. In order to achieve uniform erase speed for the three or more tiers, the erase process comprises applying a larger voltage bias to control gates of non-volatile memory cells in the outer tiers than the voltage bias applied to control gates of non-volatile memory cells in one or more inner tiers.