Boise, ID, United States of America

David K Hwang

This inventor holds 42 USPTO granted patents and 22 published patent applications and 2 EPO patents, primarily in 3D Memory Technology. Top assignees: Micron Technology Incorporated, First Solar, Inc.. Active years: 2006-2026.

USPTO Granted Patents = 42 

% Patents Active = 92.9

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 152(Granted Patents)


Location History:

  • Perrysburg, OH (US) (2015 - 2016)
  • Boise, ID (US) (2006 - 2024)

Company Filing History:


Years Active: 2006-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
3D Memory
Vertical Field Effect Transistors
Semiconductor Structures
Epitaxial Silicon
Integrated Assemblies
DRAM Cells
Photovoltaic Devices
Memory Devices
Transistor Formation
Critical Dimension Control
Opto-Electronic Properties
42 patents (USPTO):Explore Patents

Title: The Innovative Journey of David K Hwang

Introduction: David K Hwang, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: David K Hwang holds several patents in various technological areas, including artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, David K Hwang has had a successful career marked by the development of cutting-edge solutions that have improved efficiency and functionality across different industries.

Collaborations: Throughout his career, David K Hwang has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: David K Hwang's innovative spirit and dedication to pushing the boundaries of technology make him a standout figure in the world of inventors, with his work continuing to inspire and drive progress in the field of innovation.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…