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For the Inventor, By the Inventor

Boise, ID, United States of America

David K Hwang

LinkedIn
USPTO Granted Patents = 36 


Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 144(Granted Patents)


Location History:

  • Perrysburg, OH (US) (2015 - 2016)
  • Boise, ID (US) (2006 - 2024)

Company Filing History:

goldMedal33 out of 38,002 
 
Micron Technology Incorporated
 patents
silverMedal3 out of 285 
 
First Solar, Inc.
 patents

Years Active: 2006-2024

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36 patents (USPTO):Explore Patents
1. 11889680 - Integrated assemblies and methods of forming integrated assemblies (2024-01-30),
2. 11777036 - Integrated assemblies and methods of forming integrated assemblies (2023-10-03),
3. 11670707 - Integrated assemblies and methods of forming integrated assemblies (2023-06-06),
4. 11393920 - Integrated assemblies and methods of forming integrated assemblies (2022-07-19),
5. 10643906 - Methods of forming a transistor and methods of forming an array of memory cells (2020-05-05),
6. 9406829 - Method of manufacturing a photovoltaic device (2016-08-02),
7. 9263095 - Memory having buried digit lines and methods of making the same (2016-02-16),
8. 9245808 - Method and system for in-line real-time measurements of layers of multilayered front contacts of photovoltaic devices and calculation of opto-electronic properties and layer thicknesses thereof (2016-01-26),
9. 9236523 - Method and apparatus for forming a transparent conductive oxide using hydrogen (2016-01-12),
10. 9219001 - Methods of forming semiconductor devices having recesses (2015-12-22),
11. 9041086 - Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells (2015-05-26),
12. 8716116 - Method of forming a DRAM array of devices with vertically integrated recessed access device and digitline (2014-05-06),
13. 8691656 - Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM (2014-04-08),
14. 8497541 - Memory having buried digit lines and methods of making the same (2013-07-30),
15. 8497530 - Semiconductor structures including dual fins (2013-07-30),

Title: The Innovative Journey of David K Hwang

Introduction: David K Hwang, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: David K Hwang holds several patents in various technological areas, including artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, David K Hwang has had a successful career marked by the development of cutting-edge solutions that have improved efficiency and functionality across different industries.

Collaborations: Throughout his career, David K Hwang has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: David K Hwang's innovative spirit and dedication to pushing the boundaries of technology make him a standout figure in the world of inventors, with his work continuing to inspire and drive progress in the field of innovation.

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