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For the Inventor, By the Inventor

Boise, ID, United States of America

David K Hwang

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This inventor holds 42 USPTO granted patents and 22 published patent applications and 2 EPO patents, primarily in 3D Memory Technology. Top assignees: Micron Technology Incorporated, First Solar, Inc.. Active years: 2006-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David K Hwang. Retrieved from https://idiyas.com/inventor/david-k-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 42 

% Patents Active = 92.9

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 152(Granted Patents)


Location History:

  • Perrysburg, OH (US) (2015 - 2016)
  • Boise, ID (US) (2006 - 2024)

Company Filing History:

goldMedal39 out of 39,294 
 
Micron Technology Incorporated
 patents
silverMedal3 out of 302 
 
First Solar, Inc.
 patents

Years Active: 2006-2026

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Areas of Expertise:
3D Memory
Vertical Field Effect Transistors
Semiconductor Structures
Epitaxial Silicon
Integrated Assemblies
DRAM Cells
Photovoltaic Devices
Memory Devices
Transistor Formation
Critical Dimension Control
Opto-Electronic Properties
42 patents (USPTO):Explore Patents
1. 12696483 - Integrated assemblies and methods of forming integrated assemblies (2026-07-28),
2. 12696438 - Support structure for multiple, alternating epitaxial silicon (2026-07-28),
3. 12568615 - Support pillars with multiple, alternating epitaxial silicon for horizontal access devices in vertical three-dimensional (3D) memory (2026-03-03),
4. 12557266 - Fabrication method of a lateral 3D memory device (2026-02-17),
5. 12526976 - Vertical digit lines with alternating epitaxial silicon for horizontal access devices in 3D memory (2026-01-13),
6. 12526974 - Multiple, alternating epitaxial silicon for horizontal access devices in vertical three dimensional (3D) memory (2026-01-13),
7. 11889680 - Integrated assemblies and methods of forming integrated assemblies (2024-01-30),
8. 11777036 - Integrated assemblies and methods of forming integrated assemblies (2023-10-03),
9. 11670707 - Integrated assemblies and methods of forming integrated assemblies (2023-06-06),
10. 11393920 - Integrated assemblies and methods of forming integrated assemblies (2022-07-19),
11. 10643906 - Methods of forming a transistor and methods of forming an array of memory cells (2020-05-05),
12. 9406829 - Method of manufacturing a photovoltaic device (2016-08-02),
13. 9263095 - Memory having buried digit lines and methods of making the same (2016-02-16),
14. 9245808 - Method and system for in-line real-time measurements of layers of multilayered front contacts of photovoltaic devices and calculation of opto-electronic properties and layer thicknesses thereof (2016-01-26),
15. 9236523 - Method and apparatus for forming a transparent conductive oxide using hydrogen (2016-01-12),

Title: The Innovative Journey of David K Hwang

Introduction: David K Hwang, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: David K Hwang holds several patents in various technological areas, including artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, David K Hwang has had a successful career marked by the development of cutting-edge solutions that have improved efficiency and functionality across different industries.

Collaborations: Throughout his career, David K Hwang has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: David K Hwang's innovative spirit and dedication to pushing the boundaries of technology make him a standout figure in the world of inventors, with his work continuing to inspire and drive progress in the field of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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