The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jun. 27, 2014
Applicant:

First Solar, Inc., Perrysburg, OH (US);

Inventors:

Pratima Addepalli, Saline, MI (US);

Benyamin Buller, Sylvania, OH (US);

Markus Gloeckler, Perrysburg, OH (US);

Akhlesh Gupta, Sylvania, OH (US);

David Hwang, Perrysburg, OH (US);

Andrei Los, Perrysburg, OH (US);

Rick Powell, Ann Arbor, MI (US);

Rui Shao, Sylvania, OH (US);

Gang Xiong, Santa Clara, CA (US);

Ming Lun Yu, Fremont, CA (US);

San Yu, Perrysburg, OH (US);

Zhibo Zhao, Novi, MI (US);

Assignee:

First Solar, Inc., Perrysburg, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/073 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/073 (2013.01); H01L 31/1828 (2013.01); H01L 31/1864 (2013.01); Y02E 10/543 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.


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