The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Aug. 27, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01); G11C 11/408 (2006.01); H01L 29/16 (2006.01); G11C 11/22 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 27/127 (2013.01); H01L 27/1214 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 29/42384 (2013.01); H01L 29/78642 (2013.01); G11C 11/221 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); H01L 27/1225 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/78696 (2013.01);
Abstract
Some embodiments include an integrated assembly having an upwardly-extending structure with a sidewall surface. Two-dimensional-material extends along the sidewall surface. First electrostatic-doping-material is adjacent a lower region of the two-dimensional-material, insulative material is adjacent a central region of the two-dimensional-material, and second electrostatic-doping-material is adjacent an upper region of the two-dimensional-material. A conductive-gate-structure is over the first electrostatic-doping-material and adjacent to the insulative material. Some embodiments include methods of forming integrated assemblies.