David C Thomas

USPTO Granted Patents = 21 (Patent Applications = 2)

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 100(Granted Patents)

Location History:

Ithaca, NY (US) (1989)
Richmond, VT (US) (1995 - 2017)

Company Filing History:

19 out of 164,108

International Business Machines Corporation

Years Active: 1989-2017

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9825120 - Semiconductor device with metal extrusion formation (2017-11-21),

2. 9825119 - Semiconductor device with metal extrusion formation (2017-11-21),

3. 9607929 - Tsv wafer with improved fracture strength (2017-03-28),

4. 9548349 - Semiconductor device with metal extrusion formation (2017-01-17),

5. 9484301 - Controlled metal extrusion opening in semiconductor structure and method of forming (2016-11-01),

6. 9312205 - Methods of forming a TSV wafer with improved fracture strength (2016-04-12),

7. 9275868 - Uniform roughness on backside of a wafer (2016-03-01),

8. 9087839 - Semiconductor structures with metal lines (2015-07-21),

9. 9059258 - Controlled metal extrusion opening in semiconductor structure and method of forming (2015-06-16),

10. 9006703 - Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof (2015-04-14),

11. 8592941 - Fuse structure having crack stop void, method for forming and programming same, and design structure (2013-11-26),

12. 8084864 - Electromigration resistant aluminum-based metal interconnect structure (2011-12-27),

13. 8003536 - Electromigration resistant aluminum-based metal interconnect structure (2011-08-23),

14. 6982227 - Single and multilevel rework (2006-01-03),

15. 6674168 - Single and multilevel rework (2004-01-06),

Title: David C. Thomas: Innovator in Semiconductor Technology

Introduction

David C. Thomas is a notable inventor based in Richmond, Vermont, with an impressive portfolio of 21 patents. His innovative contributions primarily focus on semiconductor technology, showcasing his expertise in fabricating advanced electronic components.

Latest Patents

One of his latest patents is related to a semiconductor device with metal extrusion formation. This invention discloses a method of fabrication and a semiconductor structure comprising a Metal-insulator-metal (MIM) capacitor. The method involves several steps, including depositing a first conductive material on a semiconductor substrate, followed by the deposition of a first dielectric material on the first conductive material. A second conductive material is then deposited on the first dielectric material, and through a series of etching processes, both the top and bottom plates of the capacitor are created. Additionally, at least one opening is formed in the first dielectric layer down to the first conductive material, further enhancing the device's functionality.

Career Highlights

David has gained significant experience working with prominent companies in the tech industry. He has been associated with IBM (International Business Machines Corporation) and GlobalFoundries Inc., where he has contributed to the development of cutting-edge technologies and semiconductor solutions.

Collaborations

Throughout his career, David has collaborated with talented professionals, including Matthew D. Moon and Timothy Dooling Sullivan. Their combined expertise has fostered an environment of innovation, driving advancements in the semiconductor field.

Conclusion

David C. Thomas stands out as a leading inventor in semiconductor technology. With a strong background in engineering and a commitment to innovation, his work continues to influence the industry. His latest patents and collaborative efforts underline his dedication to advancing semiconductor structures and methods, solidifying his reputation as a key figure in this technological domain.

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2 patents pending:

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