The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jul. 31, 2013
International Business Machines Corporation, Armonk, NY (US);
Shawn A. Adderly, Essex Junction, VT (US);
Brian M. Czabaj, Essex Junction, VT (US);
Daniel A. Delibac, Colchester, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
Matthew D. Moon, Jeffersonville, VT (US);
David C. Thomas, Richmond, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer.