The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jan. 21, 2003
Edward C. Cooney, III, Jericho, VT (US);
Robert M Geffken, Burlington, VT (US);
Vincent J McGahay, Poughkeepsie, NY (US);
William T. Motsiff, Essex Junction, VT (US);
Mark P. Murray, Burlington, VT (US);
Amanda L. Piper, Wappingers Falls, NY (US);
Anthony K. Stamper, Williston, VT (US);
David C. Thomas, Richmond, VT (US);
Christy S. Tyberg, Croton-On-Hudson, NY (US);
Elizabeth T. Webster, Richmond, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of reworking BEOL (back end of a processing line) metallization levels of damascene metallurgy comprises forming a plurality of BEOL metallization levels over a substrate, forming line and via portions in the BEOL metallization levels, selectively removing at least one of the BEOL metallization levels to expose the line and via portions, and replacing the removed BEOL metallization levels with at least one new BEOL metallization level, wherein the BEOL metallization levels comprise a first dielectric layer and a second dielectric layer, and wherein the first dielectric layer comprising a lower dielectric constant material than the second dielectric layer.