The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Mar. 04, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Max G. Levy, Essex Junction, VT (US);

Gary L. Milo, Milton, VT (US);

Matthew D. Moon, Jeffersonville, VT (US);

Anthony C. Speranza, Georgetown, TX (US);

Timothy D. Sullivan, Underhill, VT (US);

David C. Thomas, Richmond, VT (US);

Steven S. Williams, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 2924/0002 (2013.01); H01L 28/60 (2013.01);
Abstract

Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.


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