Wappingers Falls, NY, United States of America

David C Ahlgren

This inventor holds 16 USPTO granted patents, primarily in Bipolar Transistors. Top assignee: International Business Machines Corporation. Active years: 1987-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David C Ahlgren. Retrieved from https://idiyas.com/inventor/david-c-ahlgren

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 68.8

Average Co-Inventor Count = 4.6

ph-index = 8

Forward Citations = 208(Granted Patents)

Location History:

Hopewell Junction, NY (US) (1987)
Wappingers Falls, NY (US) (1993 - 2009)

Company Filing History:

16 out of 166,425

International Business Machines Corporation

patents

Years Active: 1987-2009

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Areas of Expertise:

Bipolar Transistor

BiCMOS Integration

Self-Aligned Silicide

Extrinsic Base

Germanium Profile

Silicon-Germanium Alloy

Temperature Monitoring

Defect Reduction

Oxide Etch

Trench Shape

Integrated Circuit

Undercut Passivation

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7611953 - Bipolar transistor with isolation and direct contacts (2009-11-03),

2. 7585740 - Fully silicided extrinsic base transistor (2009-09-08),

3. 7466010 - Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border (2008-12-16),

4. 7217988 - Bipolar transistor with isolation and direct contacts (2007-05-15),

5. 7129129 - Vertical device with optimal trench shape (2006-10-31),

6. 6979884 - Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border (2005-12-27),

7. 6881259 - In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films (2005-04-19),

8. 6858532 - Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling (2005-02-22),

9. 6780695 - BiCMOS integration scheme with raised extrinsic base (2004-08-24),

10. 6667521 - Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit (2003-12-23),

11. 6492238 - Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit (2002-12-10),

12. 5766971 - Oxide strip that improves planarity (1998-06-16),

13. 5656514 - Method for making heterojunction bipolar transistor with self-aligned (1997-08-12),

14. 5266505 - Image reversal process for self-aligned implants in planar (1993-11-30),

15. 4701998 - Method for fabricating a bipolar transistor (1987-10-27),

Title: The Inventor Profile of David C Ahlgren

Introduction: David C Ahlgren is a renowned inventor based in Wappingers Falls, NY (US) known for his groundbreaking contributions to various fields.

Latest Patents: David C Ahlgren holds several patents in the areas of renewable energy technologies, medical devices, and consumer electronics.

Career Highlights: With a career spanning over two decades, David C Ahlgren has worked with top research institutions and companies to develop innovative solutions that have had a significant impact on society.

Collaborations: Throughout his career, David C Ahlgren has collaborated with leading universities, tech companies, and healthcare institutions to bring his inventions to life and make a positive difference in the world.

Conclusion: David C Ahlgren's passion for innovation and his dedication to creating meaningful change through his inventions have solidified his reputation as a pioneering inventor in the industry.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]