The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Aug. 07, 2000
David C. Ahlgren, Wappingers Falls, NY (US);
Jack Oon Chu, Manhasset Hill, NY (US);
Basanth Jagannathan, Stormville, NY (US);
Ryan W. Wuthrich, Burlington, VT (US);
David C. Ahlgren, Wappingers Falls, NY (US);
Jack Oon Chu, Manhasset Hill, NY (US);
Basanth Jagannathan, Stormville, NY (US);
Ryan W. Wuthrich, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Analysis of residual gases from a process for depositing a film containing silicon on a crystalline silicon surface to determine partial pressure of hydrogen evolved during deposition develops a signature which indicates temperature and/or concentration of germanium at the deposition surface. Calibration and collection of hydrogen partial pressure data at a rate which is high relative to film deposition rate allows real-time, in-situ, non-destructive determination of material concentration profile over the thickness of the film and/or monitoring the temperature of a silicon film deposition process with increased accuracy and resolution to provide films of a desired thickness with high accuracy.