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For the Inventor, By the Inventor

Beacon, NY, United States of America

Basanth Jagannathan

USPTO Granted Patents = 23

Average Co-Inventor Count = 4.4

ph-index = 7

Forward Citations = 179(Granted Patents)


Location History:

  • Schaumburg, IL (US) (2008)
  • Stormville, NY (US) (2002 - 2010)
  • Lake Zurich, IL (US) (2010)
  • Beacon, NY (US) (2003 - 2014)
  • Shrub Oak, NY (US) (2024)

Company Filing History:

goldMedal23 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2002-2024

where 'Filed Patents' based on already Granted Patents

23 patents (USPTO):
1. 11916384 - Region-based power grid generation through modification of an initial power grid based on timing analysis (2024-02-27),
2. 8829572 - Structure and layout of a FET prime cell (2014-09-09),
3. 8187930 - Structure and layout of a FET prime cell (2012-05-29),
4. 7741857 - System and method for de-embedding a device under test employing a parametrized netlist (2010-06-22),
5. 7713829 - Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology (2010-05-11),
6. 7355221 - Field effect transistor having an asymmetrically stressed channel region (2008-04-08),
7. 7183576 - [object Object] (2007-02-27),
8. 7173274 - Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology (2007-02-06),
9. 6927476 - Bipolar device having shallow junction raised extrinsic base and method for making the same (2005-08-09),
10. 6908866 - Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD (2005-06-21),
11. 6881259 - In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films (2005-04-19),
12. 6875279 - Single reactor, multi-pressure chemical vapor deposition for semiconductor devices (2005-04-05),
13. 6858532 - Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling (2005-02-22),
14. 6815802 - Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology (2004-11-09),
15. 6787427 - Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics (2004-09-07),

Title: Innovations and Contributions of Basanth Jagannathan

Introduction

Basanth Jagannathan is a prolific inventor based in Beacon, NY, known for his remarkable contributions to the field of semiconductor technology. With a portfolio of 23 patents, he has made significant advancements in power grid generation and semiconductor device development.

Latest Patents

One of Basanth's latest patents is focused on region-based power grid generation through the modification of an initial power grid based on timing analysis. The invention involves defining a power tile within a power distribution network, which includes a grid of power rails and logic gates. The innovative approach allows for the application of an initial power grid pattern from multiple designs, ensuring that the selected pattern is optimized for the timing characteristics of the logic gates. Another significant patent covers the structure and layout of a FET prime cell, a critical method for creating semiconductor devices. This process includes the formation of source and drain in a substrate, along with electrical contacts designed to enhance device performance.

Career Highlights

Basanth Jagannathan works for International Business Machines Corporation (IBM), where he plays a vital role in the development of cutting-edge semiconductor technologies. His extensive experience and innovative mindset have positioned him as a leading figure in his field.

Collaborations

Throughout his career, Basanth has collaborated with notable colleagues, including Jack Oon Chu and Ryan Wayne Wuthrich. These collaborations allow him to synergize ideas and push the boundaries of technological advancements in power grid systems and semiconductor devices.

Conclusion

Basanth Jagannathan continues to exemplify innovation in his domain. With his impressive list of patents and collaborative efforts at IBM, he is sure to contribute further groundbreaking advancements in the future. His work not only reflects his dedication to the field of technology but also the potential for significant impacts on power systems and semiconductor integrity.

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