The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2005

Filed:

Nov. 16, 2001
Applicants:

Jack O. Chu, Manhasset Hills, NY (US);

Basanth Jagannathan, Beacon, NY (US);

Ryan Wayne Wuthrich, Burlington, VT (US);

Inventors:

Jack O. Chu, Manhasset Hills, NY (US);

Basanth Jagannathan, Beacon, NY (US);

Ryan Wayne Wuthrich, Burlington, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C016/00 ;
U.S. Cl.
CPC ...
Abstract

An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.


Find Patent Forward Citations

Loading…