The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Feb. 10, 2004
Jack Oon Chu, Manhasset Hills, NY (US);
Basanth Jagannathan, Stormville, NY (US);
Alfred Grill, White Plains, NY (US);
Bernard Steele Meyerson, Yorktown Heights, NY (US);
John Albrecht Ott, Greenwood Lake, NY (US);
Jack Oon Chu, Manhasset Hills, NY (US);
Basanth Jagannathan, Stormville, NY (US);
Alfred Grill, White Plains, NY (US);
Bernard Steele Meyerson, Yorktown Heights, NY (US);
John Albrecht Ott, Greenwood Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon <10cm, the as-grown p- or n-type dopant profile can withstand furnace anneals to temperatures of 850° C. and rapid thermal anneal temperatures to 1000° C.