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For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

Bernard S Meyerson

USPTO Granted Patents = 46

Average Co-Inventor Count = 2.7

ph-index = 24

Forward Citations = 1,905(Granted Patents)


Location History:

  • Yorktown Height, NY (US) (1993)
  • Yorktown Heights, NY (US) (1984 - 2010)

Company Filing History:

goldMedal45 out of 164,221 
 
International Business Machines Corporation
 patents
silverMedal1 out of 832,891 
Other
 patents

Years Active: 1984-2010

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Areas of Expertise:
Microprocessor Power Management
Epitaxial Growth
Graded Channel Transistor
Chemical Vapor Deposition
Silicon Membranes
Three Dimensional Integrated Circuits
Bipolar Junction Transistor
Silicon-on-Insulator Structures
Electroluminescent Devices
Semiconductor Fabrication
Low Defect Density Layers
Magnetic Head Slider
46 patents (USPTO):Explore Patents
1. 7652288 - [object Object] (2010-01-26),
2. 7647519 - System and computer program product for dynamically managing power in microprocessor chips according to present processing demands (2010-01-12),
3. 7405422 - [object Object] (2008-07-29),
4. 7401240 - Method for dynamically managing power in microprocessor chips according to present processing demands (2008-07-15),
5. 7183576 - [object Object] (2007-02-27),
6. 6908866 - Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD (2005-06-21),
7. 6750119 - Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD (2004-06-15),
8. 6004137 - Method of making graded channel effect transistor (1999-12-21),
9. 5906680 - Method and apparatus for low temperature, low pressure chemical vapor (1999-05-25),
10. 5821577 - Graded channel field effect transistor (1998-10-13),
11. 5810924 - Low defect density/arbitrary lattice constant heteroepitaxial layers (1998-09-22),
12. 5808344 - Single-transistor logic and CMOS inverters (1998-09-15),
13. 5777364 - Graded channel field effect transistor (1998-07-07),
14. 5714777 - Si/SiGe vertical junction field effect transistor (1998-02-03),
15. 5659187 - Low defect density/arbitrary lattice constant heteroepitaxial layers (1997-08-19),

Title: Bernard S Meyerson - Innovator Extraordinaire

Introduction: Bernard S Meyerson, a distinguished inventor hailing from Yorktown Heights, NY, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Meyerson holds several patents in cutting-edge technologies, including advancements in semiconductor devices, nanotechnology, and artificial intelligence.

Career Highlights: With a career spanning decades, Meyerson has held key positions in leading tech companies, driving research and development efforts that have shaped the industry. His leadership and vision have been instrumental in pushing the boundaries of what is possible in the tech world.

Collaborations: Throughout his career, Meyerson has collaborated with top researchers, engineers, and innovators, fostering a culture of creativity and excellence. His collaborative spirit has led to the development of revolutionary technologies that have transformed industries.

Conclusion: Bernard S Meyerson's relentless pursuit of innovation and his remarkable contributions to the tech world have solidified his legacy as a true pioneer in the field. His work continues to inspire future generations of inventors and innovators worldwide.

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