The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1998
Filed:
Feb. 19, 1997
Khalid EzzEldin Ismail, White Plains, NY (US);
Bernard S Meyerson, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A junction field effect transistor and method for making is described incorporating horizontal semiconductor layers within an opening to form a channel and a semiconductor layer through which the opening was made which forms a gate electrode surrounding the channel. The horizontal semiconductor layers may be a SiGe alloy with graded composition near the source and drain. The invention overcomes the problem of forming low resistance JFET's and provides a gate length that is easily scaleable to submicron dimensions for rf, microwave, millimeter and logic circuits without short channel effects.