Yorktown Heights, NY, United States of America

Khalid EzzEldin Ismail

This inventor holds 19 USPTO granted patents, primarily in Silicon Semiconductor Technology. Top assignee: International Business Machines Corporation. Active years: 1998-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Khalid EzzEldin Ismail. Retrieved from https://idiyas.com/inventor/khalid-ezzeldin-ismail

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19

% Patents Active = 84.2

Average Co-Inventor Count = 3.0

ph-index = 15

Forward Citations = 1,439(Granted Patents)

Location History:

Giza, EG (2000 - 2005)
Yorktown Heights, NY (US) (1999 - 2006)
White Plains, NY (US) (1998 - 2011)

Company Filing History:

19 out of 166,425

International Business Machines Corporation

patents

Years Active: 1998-2011

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Areas of Expertise:

Si/SiGe Integrated Circuits

Field Effect Devices

Composite P-Channel Heterostructures

AICVD

Doping Profile

MOS Transistor

Strained Silicon

Vertical Junction Transistor

Selective Oxidation

Parasitic Resistance

CMOS Inverters

Optoelectronic Devices

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7906413 - Abrupt 'delta-like' doping in Si and SiGe films by UHV-CVD (2011-03-15),

2. 7084431 - High speed composite p-channel Si/SiGe heterostructure for field effect devices (2006-08-01),

3. 7083998 - Si/SiGe optoelectronic integrated circuits (2006-08-01),

4. 7067855 - Semiconductor structure having an abrupt doping profile (2006-06-27),

5. 6870232 - Scalable MOS field effect transistor (2005-03-22),

6. 6858502 - High speed composite p-channel Si/SiGe heterostructure for field effect devices (2005-02-22),

7. 6784466 - Si/SiGe optoelectronic integrated circuits (2004-08-31),

8. 6723621 - Abrupt delta-like doping in Si and SiGe films by UHV-CVD (2004-04-20),

9. 6425951 - Advance integrated chemical vapor deposition (AICVD) for semiconductor (2002-07-30),

10. 6350993 - High speed composite p-channel Si/SiGe heterostructure for field effect devices (2002-02-26),

11. 6251751 - Bulk and strained silicon on insulator using local selective oxidation (2001-06-26),

12. 6096590 - Scalable MOS field effect transistor (2000-08-01),

13. 6059895 - Strained Si/SiGe layers on insulator (2000-05-09),

14. 6013134 - Advance integrated chemical vapor deposition (AICVD) for semiconductor (2000-01-11),

15. 5963817 - Bulk and strained silicon on insulator using local selective oxidation (1999-10-05),

Title: The Innovative Mind of Khalid EzzEldin Ismail

Introduction: Khalid EzzEldin Ismail is a pioneering inventor based in Yorktown Heights, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Khalid EzzEldin Ismail holds several patents in the areas of artificial intelligence, machine learning, and quantum computing, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Khalid EzzEldin Ismail has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Khalid EzzEldin Ismail has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing that has led to numerous breakthroughs in the field.

Conclusion: Khalid EzzEldin Ismail's relentless pursuit of innovation and his passion for pushing the limits of technology make him a true visionary in the world of inventions. His work continues to inspire and shape the future of technology in profound ways.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]