The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Apr. 28, 2006
Frank Cardone, Yonkers, NY (US);
Jack Oon Chu, Astoria, NY (US);
Khalid Ezzeldin Ismail, White Plains, NY (US);
Frank Cardone, Yonkers, NY (US);
Jack Oon Chu, Astoria, NY (US);
Khalid EzzEldin Ismail, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10atoms/cc, and a second epitaxial layer having a change in concentration in its first 40from the first layer of greater than 1×10P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.