Frank Cardone

Title: Frank Cardone: Innovator in Semiconductor Technology

Introduction

Frank Cardone is a notable inventor based in Yonkers, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing methods to improve doping profiles in semiconductor structures, which are crucial for the performance of various electronic devices.

Latest Patents

Frank Cardone's latest patents include innovative methods for achieving abrupt doping profiles in silicon (Si) and silicon-germanium (SiGe) films. One of his patents describes a structure and method that incorporates a substrate and a first epitaxial layer of germanium (Ge) with a concentration of phosphorus (P) or arsenic (As) greater than 5×10 atoms/cc. The second epitaxial layer exhibits a significant change in concentration within its first 40 micrometers from the first layer. This invention addresses the challenges of forming abrupt phosphorus profiles in semiconductor structures such as CMOS, MODFETs, and HBTs.

Career Highlights

Frank Cardone is currently employed at the International Business Machines Corporation (IBM), where he continues to advance semiconductor technology. His expertise in doping profiles has positioned him as a key player in the development of next-generation electronic components.

Collaborations

Frank has collaborated with notable colleagues, including Jack Oon Chu and Khalid EzzEldin Ismail. These partnerships have fostered innovation and contributed to the successful development of his patented technologies.

Conclusion

Frank Cardone's work in semiconductor technology exemplifies the importance of innovation in enhancing electronic device performance. His contributions through patents and collaborations continue to shape the future of the industry.