The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Jul. 01, 2004
Jack Oon Chu, Astoria, NY (US);
Khalid Ezzeldin Ismail, Yorktown Heights, NY (US);
Steven John Koester, Croton-on-Hudson, NY (US);
Bernd-ulrich H. Klepser, Munich, DE;
Jack Oon Chu, Astoria, NY (US);
Khalid EzzEldin Ismail, Yorktown Heights, NY (US);
Steven John Koester, Croton-on-Hudson, NY (US);
Bernd-Ulrich H. Klepser, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.