The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Apr. 17, 2000
Kevin Kok Chan, Staten Island, NY (US);
Jack Oon Chu, Astoria, NY (US);
Khalid Ezzeldin Ismail, Giza, EG;
Stephen Anthony Rishton, Hayward, CA (US);
Katherine Lynn Saenger, Ossining, NY (US);
Kevin Kok Chan, Staten Island, NY (US);
Jack Oon Chu, Astoria, NY (US);
Khalid EzzEldin Ismail, Giza, EG;
Stephen Anthony Rishton, Hayward, CA (US);
Katherine Lynn Saenger, Ossining, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor and method for making is described incorporating self aligned source and drain contacts with Schottky metal-to-semiconductor junction and a T-shaped gate or incorporating highly doped semiconductor material for the source and drain contacts different from the channel material to provide etch selectivity and a T-shaped gate or incorporating a metal for the source and drain contacts and the oxide of the metal for the gate dielectric which is self aligned.