The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Nov. 20, 2001
Jack Oon Chu, Manhasset Hills, NY (US);
Richard Hammond, Dobbs Ferry, NY (US);
Khalid Ezzeldin Ismail, Yorktown Heights, NY (US);
Steven John Koester, Ossining, NY (US);
Patricia May Mooney, Mt. Kisco, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Jack Oon Chu, Manhasset Hills, NY (US);
Richard Hammond, Dobbs Ferry, NY (US);
Khalid EzzEldin Ismail, Yorktown Heights, NY (US);
Steven John Koester, Ossining, NY (US);
Patricia May Mooney, Mt. Kisco, NY (US);
John A. Ott, Greenwood Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.