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For the Inventor, By the Inventor

Mount Kisco, NY, United States of America

Patricia May Mooney

USPTO Granted Patents = 18

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 553(Granted Patents)


Location History:

  • Mt. Kisco, NY (US) (2002 - 2006)
  • Mount Kisco, NY (US) (2003 - 2013)

Company Filing History:

goldMedal18 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2002-2013

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18 patents (USPTO):
1. 8409974 - Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same (2013-04-02),
2. 7812340 - Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same (2010-10-12),
3. 7723791 - Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels (2010-05-25),
4. 7709352 - In-place bonding of microstructures (2010-05-04),
5. 7456081 - In-place bonding of microstructures (2008-11-25),
6. 7423303 - Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels (2008-09-09),
7. 7396747 - Hetero-integrated strained silicon n- and p-MOSFETs (2008-07-08),
8. 7273800 - Hetero-integrated strained silicon n- and p-MOSFETs (2007-09-25),
9. 7271043 - Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels (2007-09-18),
10. 7238589 - In-place bonding of microstructures (2007-07-03),
11. 7084431 - High speed composite p-channel Si/SiGe heterostructure for field effect devices (2006-08-01),
12. 6858502 - High speed composite p-channel Si/SiGe heterostructure for field effect devices (2005-02-22),
13. 6855649 - Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing (2005-02-15),
14. 6833332 - Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same (2004-12-21),
15. 6709903 - Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing (2004-03-23),

Title: Patricia May Mooney: A Visionary Inventor Shaping the Future

Introduction:

Patricia May Mooney, a pioneering inventor based in Mount Kisco, NY, has left an indelible mark on the world of inventions. With 18 patents to her name, her innovative spirit and groundbreaking ideas continue to inspire generations to push the boundaries of what is possible.

Latest Patents:

Among her latest patents is the "Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same." This method involves the straining of a free-standing semiconductor and fixing it to a substrate, resulting in a unique semiconductor structure with promising applications in technology.

Career Highlights:

Throughout her esteemed career, Patricia has been a key figure at the renowned International Business Machines Corporation (IBM). Her contributions to the field of technology have led to significant advancements in semiconductor structures and beyond, solidifying her reputation as a trailblazer in the industry.

Collaborations:

In her pursuit of innovation, Patricia has collaborated closely with esteemed colleagues such as Jack Oon Chu and Silke Hildegard Christiansen. These fruitful collaborations have resulted in the development of cutting-edge technologies that have reshaped the landscape of modern inventions.

Conclusion:

As a female inventor, Patricia May Mooney's impact on the world of inventions is unparalleled. Her creative vision, coupled with her relentless drive to push the boundaries of innovation, serves as a beacon of inspiration for aspiring inventors and innovators worldwide. Patricia's legacy will continue to shape the future of technology and pave the way for new discoveries in the ever-evolving world of inventions.

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