The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2005
Filed:
Nov. 19, 2002
Silke H. Christiansen, Halle, DE;
Jack O. Chu, Manhasset Hill, NY (US);
Alfred Grill, White Plains, NY (US);
Patricia M. Mooney, Mount Kisco, NY (US);
Silke H. Christiansen, Halle, DE;
Jack O. Chu, Manhasset Hill, NY (US);
Alfred Grill, White Plains, NY (US);
Patricia M. Mooney, Mount Kisco, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method to obtain thin (less than 300 nm) strain-relaxed SiGebuffer layers on Si or silicon-on-insulator (SOI) substrates. These buffer layers have a homogeneous distribution of misfit dislocations that relieve the strain, remarkably smooth surfaces, and a low threading dislocation (TD) density, i.e. less than 10cm. The approach begins with the growth of a pseudomorphic or nearly pseudomorphic SiGelayer, i.e., a layer that is free of misfit dislocations, which is then implanted with He or other light elements and subsequently annealed to achieve the substantial strain relaxation. The very effective strain relaxation mechanism operating with this method is dislocation nucleation at He-induced platelets (not bubbles) that lie below the Si/SiGeinterface, parallel to the Si(001) surface.