Location History:
- Mount Kisco, NY (US) (2003 - 2004)
- Erlangen, DE (2003 - 2004)
- Buckenhof, DE (2004)
- Halle, DE (2004 - 2005)
Company Filing History:
6 out of 164,219 
1 out of 832,880 Years Active: 2003-2005
Title: Silke Hildegard Christiansen: Pioneering Innovations in Semiconductor Technology
Introduction: Silke Hildegard Christiansen, an accomplished inventor based in Halle, Germany, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of six patents, Christiansen's work revolves around the development of advanced materials and methods that enhance the performance and reliability of electronic devices.
Latest Patents: Among Christiansen's most notable patents is a method for producing relaxed SiGe layers on silicon or silicon-on-insulator substrates through ion implantation and thermal annealing. This innovative technique enables the creation of thin, strain-relaxed SiGe buffer layers that are under 300 nm in thickness. These layers exhibit a homogeneous distribution of misfit dislocations, which effectively relieves strain, resulting in remarkably smooth surfaces and a low threading dislocation (TD) density of less than 10 cm. The process begins with the growth of a nearly pseudomorphic SiGe layer free of misfit dislocations, followed by implantation with light elements such as Helium. The subsequent annealing step achieves substantial strain relaxation via dislocation nucleation at He-induced platelets.
Another recent patent details a method for fabricating relaxed SiGe buffer layers with low threading dislocation densities on silicon-on-insulator substrates. This process involves the epitaxial deposition of defect-free Ge or SiGe islands, which are then capped and planarized with a Si or Si-rich SiGe layer. The structure undergoes annealing at elevated temperatures, leading to intermixing and ultimately forming a relaxed SiGe layer on the insulating layer of the wafer. This invention also encompasses semiconductor structures, devices, and integrated circuits that incorporate these relaxed SiGe buffer layers.
Career Highlights: Silke Christiansen is associated with International Business Machines Corporation (IBM), where she has leveraged her expertise to drive innovation in semiconductor technologies. Her patents illustrate her deep understanding of material science and semiconductor physics, positioning her as a key figure in advancing state-of-the-art electronic components.
Collaborations: Throughout her career, Christiansen has collaborated with esteemed colleagues such as Alfred Grill and Patricia May Mooney. These partnerships have facilitated the exchange of ideas and fostered an environment of innovation, contributing to the successful development of various semiconductor technologies.
Conclusion: Silke Hildegard Christiansen's contributions to semiconductor technology through her innovative patents underscore her role as a leading inventor in the field. Her work not only advances the capabilities of electronic devices but also exemplifies the importance of collaboration in driving technological progress. As the industry continues to evolve, Christiansen's inventions will likely play a crucial role in shaping the future of semiconductor applications.