The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Aug. 15, 2008
Huilong Zhu, Poughkeepsie, NY (US);
Bruce B. Doris, Brewster, NY (US);
Huajie Chen, Danbury, CT (US);
Patricia M. Mooney, Mount Kisco, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Bruce B. Doris, Brewster, NY (US);
Huajie Chen, Danbury, CT (US);
Patricia M. Mooney, Mount Kisco, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact with the insulating layer, the semiconducting layer comprising a first strained Si region and a second strained Si region; wherein the first strained Si region has a crystallographic orientation different from the second strained Si region and the first strained Si region has a crystallographic orientation the same or different from the second strained Si region. The strained level of the first strained Si region is different from that of the second strained Si region.