The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 1998

Filed:

Jun. 07, 1995
Applicant:
Inventors:

Francoise Kolmer Legoues, Peekskill, NY (US);

Bernard Steele Meyerson, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
117 89 ; 148D / ; 148D / ;
Abstract

A multi-layered structure and process for forming it arc described, incorporating a single crystal substrate, a plurality of epitaxial layers having graded composition wherein the layers have changing lattice spacings not exceeding about 2 percent per 1000 .ANG. of thickness whereby misfit dislocations are formed to relieve strain and then move to the edges of respective layers. The invention overcomes the problem of large numbers of misfit dislocations threading to the surface of the top layer, especially during device processing at temperatures in a range from 700 to 900 degrees Celsius. Fully relaxed, incommensurate structures having low defect densities are obtained, where arbitrary combinations of materials can be used.


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