The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Apr. 15, 2002
Jack Oon Chu, Manhasset Hills, NY (US);
Douglass Duane Coolbaugh, Essex Junction, VT (US);
James Stuart Dunn, Jericho, VT (US);
David R. Greenberg, White Plains, NY (US);
David L. Harame, Essex Junction, VT (US);
Basanth Jagannathan, Stormville, NY (US);
Robb Allen Johnson, South Burlington, VT (US);
Louis D. Lanzerotti, Burlington, VT (US);
Kathryn Turner Schonenberg, New Fairfield, CT (US);
Ryan Wayne Wuthrich, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.