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For the Inventor, By the Inventor

White Plains, NY, United States of America

David R Greenberg

USPTO Granted Patents = 26 

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 195(Granted Patents)


Location History:

  • White Plains, NY (US) (2002 - 2014)
  • Nyack, NY (US) (2015)

Company Filing History:

goldMedal24 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents
bronzeMedal1 out of 2 
 
Information Business Machines Corporation
 patents

Years Active: 2002-2015

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26 patents (USPTO):
1. 9190479 - Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another (2015-11-17),
2. 8877606 - Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation (2014-11-04),
3. 8872279 - Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another (2014-10-28),
4. 8455924 - Multi-level interconnections for an integrated circuit chip (2013-06-04),
5. 8421478 - Radio frequency integrated circuit with on-chip noise source for self-test (2013-04-16),
6. 8227865 - Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer (2012-07-24),
7. 8178908 - Electrical contact structure having multiple metal interconnect levels staggering one another (2012-05-15),
8. 7767546 - Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer (2010-08-03),
9. 7713829 - Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology (2010-05-11),
10. 7642569 - Transistor structure with minimized parasitics and method of fabricating the same (2010-01-05),
11. 7615457 - Method of fabricating self-aligned bipolar transistor having tapered collector (2009-11-10),
12. 7491617 - Transistor structure with minimized parasitics and method of fabricating the same (2009-02-17),
13. 7425754 - Structure and method of self-aligned bipolar transistor having tapered collector (2008-09-16),
14. 7414275 - Multi-level interconnections for an integrated circuit chip (2008-08-19),
15. 7355221 - Field effect transistor having an asymmetrically stressed channel region (2008-04-08),

Title: Innovation Extraordinaire: The Genius of David R Greenberg

Introduction: Meet David R Greenberg, a prolific inventor hailing from White Plains, NY, who has made significant contributions to the field of technology with an impressive portfolio of 26 patents.

Latest Patents:

1. Transistor structure having an electrical contact structure with multiple metal interconnect levels staggering one another: Greenberg's innovative electrical contact structure enhances current distribution, making it ideal for high-performance transistors.

2. Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self-aligned shallow trench isolation: His semiconductor substrate design streamlines the manufacturing process for integrated circuit devices, showcasing his expertise in cost-effective fabrication techniques.

Career Highlights: David R Greenberg is a key figure in the research and development team at International Business Machines Corporation (IBM). His groundbreaking work has garnered recognition for IBM's cutting-edge technological advancements.

Collaborations: Greenberg's dedication to innovation is amplified through collaborations with esteemed colleagues like Basanth Jagannathan and Shwu-Jen Jeng. Together, they have brought forth transformative ideas that have shaped the landscape of modern technology.

Conclusion: In conclusion, David R Greenberg's inventive spirit and technical acumen have solidified his position as a visionary in the realm of technological innovation. His patents stand as a testament to his ingenuity and unwavering commitment to pushing the boundaries of what is possible in the world of technology.

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