Company Filing History:
Years Active: 2004
Title: Douglass Duane Coolbaugh: Innovator in SiGe Bipolar Technology
Introduction
Douglass Duane Coolbaugh is a notable inventor based in Essex Junction, VT (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of SiGe bipolar transistors. His innovative work has led to advancements that enhance the performance and yield of these devices.
Latest Patents
Coolbaugh holds a patent for the "Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology." This patent describes a SiGe bipolar transistor that contains substantially no dislocation defects present between the emitter and collector region. The invention includes a collector region of a first conductivity type, a SiGe base region formed on a portion of the collector region, and an emitter region of the same conductivity type formed over a portion of the base region. Notably, both the collector and base regions include carbon continuously therein, and the base region is further doped with boron. This innovative approach significantly improves the reliability and efficiency of SiGe bipolar technology.
Career Highlights
Coolbaugh is associated with International Business Machines Corporation (IBM), where he has contributed to various projects and research initiatives. His work at IBM has positioned him as a key player in the semiconductor industry, particularly in the development of advanced transistor technologies.
Collaborations
Throughout his career, Coolbaugh has collaborated with esteemed colleagues, including Jack Oon Chu and James Stuart Dunn. These collaborations have fostered an environment of innovation and have led to the successful development of cutting-edge technologies in the semiconductor field.
Conclusion
Douglass Duane Coolbaugh's contributions to SiGe bipolar technology exemplify his commitment to innovation in the semiconductor industry. His patent and collaborative efforts have paved the way for advancements that enhance the performance of electronic devices.
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