The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Oct. 01, 2003
David R. Greenberg, White Plains, NY (US);
Basanth Jagannathan, Beacon, NY (US);
Shwu-Jen Jeng, Wappingers Falls, NY (US);
Joseph T. Kocis, Pleasant Valley, NY (US);
Samuel C. Ramac, Poughkeepsie, NY (US);
David M. Rockwell, Susquehanna, PA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.