Poughkeepsie, NY, United States of America

Samuel C Ramac


Average Co-Inventor Count = 7.4

ph-index = 5

Forward Citations = 85(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (1998)
  • Wappinger Falls, NY (US) (1997 - 1999)
  • Essex Junction, VT (US) (2005)
  • Poughkeepsie, NY (US) (2003 - 2010)

Company Filing History:


Years Active: 1997-2010

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: The Innovations of Samuel C. Ramac

Introduction

Samuel C. Ramac, an inventive mind based in Poughkeepsie, NY, has made significant contributions in the realm of semiconductor technology. With a total of eight patents to his name, he has specialized in enhancing the performance of CMOS transistors through innovative techniques in polysilicon gate electrode design.

Latest Patents

Ramac's latest patents focus on improving the electrical performance of CMOS transistors. One key patent describes a method for reducing polysilicon electrical depletion in a gate electrode. This is accomplished by depositing polysilicon under controlled conditions to create a structure with varying crystal grain sizes through the thickness of the polysilicon. The design includes contiguous regions of differing crystalline grain sizes, an approach aimed at maximizing dopant activation near the gate dielectric. Additionally, it allows for the tailoring of resistance in polysilicon farther from the dielectric. The method's effectiveness is particularly valuable in the formation of field-effect transistors (FETs) and doped polysilicon resistors.

Career Highlights

Throughout his career, Samuel C. Ramac has been associated with prominent companies, including IBM and Siemens Aktiengesellschaft. His work in these organizations has allowed him to collaborate on groundbreaking projects that push the boundaries of semiconductor design and technology.

Collaborations

During his career, Ramac has had the privilege of working alongside esteemed colleagues such as Herbert Lei Ho and Erwin Hammerl. These collaborations have fostered an environment of innovation and have helped in the development of advanced technologies in the semiconductor industry.

Conclusion

Samuel C. Ramac's contributions to the field of semiconductor technology, particularly through his patents on polysilicon gate electrodes, showcase his expertise and dedication as an inventor. His innovative approach has not only advanced the capabilities of CMOS transistors but also demonstrated the importance of research and collaboration in driving technological progress.

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