The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Dec. 10, 2002
Wesley C. Natzle, New Paltz, NY (US);
David C. Ahlgren, Wappingers Falls, NY (US);
Steven G. Barbee, Amenia, NY (US);
Marc W. Cantell, Sheldon, VT (US);
Basanth Jagannathan, Beacon, NY (US);
Louis D. Lanzerotti, Burlington, VT (US);
Seshadri Subbanna, Brewster, NY (US);
Ryan W. Wuthrich, Burlington, VT (US);
Wesley C. Natzle, New Paltz, NY (US);
David C. Ahlgren, Wappingers Falls, NY (US);
Steven G. Barbee, Amenia, NY (US);
Marc W. Cantell, Sheldon, VT (US);
Basanth Jagannathan, Beacon, NY (US);
Louis D. Lanzerotti, Burlington, VT (US);
Seshadri Subbanna, Brewster, NY (US);
Ryan W. Wuthrich, Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides reduced capacitance and helps to achieve high speed. An apparatus is also described for practicing the disclosed process.