The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Nov. 22, 1994
David Ahlgren, Wappingers Falls, NY (US);
Jack Chu, Long Island City, NY (US);
Martin Revitz, Poughkeepsie, NY (US);
Paul Ronsheim, Wappingers Falls, NY (US);
Mary Saccamango, Patterson, NY (US);
David Sunderland, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.