The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Jun. 04, 2004
David C. Ahlgren, Wappingers Falls, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Francois Pagette, Fishkill, NY (US);
Christopher M. Schnabel, Poughkeepsie, NY (US);
Anna W. Topol, Fishkill, NY (US);
David C. Ahlgren, Wappingers Falls, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Francois Pagette, Fishkill, NY (US);
Christopher M. Schnabel, Poughkeepsie, NY (US);
Anna W. Topol, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved f, Fmax and drive current.