The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Jul. 05, 2005
David C. Ahlgren, Wappingers Falls, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Marwan H. Khater, Poughkeepsie, NY (US);
Richard P. Volant, New Fairfield, CT (US);
David C. Ahlgren, Wappingers Falls, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Marwan H. Khater, Poughkeepsie, NY (US);
Richard P. Volant, New Fairfield, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.