Kiryat Tivon, Israel

David Berman

This inventor holds 18 USPTO granted patents. Top assignees: Jordan Valley Applied Radiation Ltd., Jordan Valley Semiconductors Ltd., Jordan Valley Semiconductor Ltd. Active years: 2003-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: David Berman. Retrieved from https://idiyas.com/inventor/david-berman-7grotz72

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 384(Granted Patents)


Location History:

  • Tivon, IS (2003)
  • Kiryat Tivon, IL (2006 - 2010)
  • Kiryar Tivon, IL (2010)
  • Tivon, IL (2003 - 2014)

Company Filing History:


Years Active: 2003-2014

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18 patents (USPTO):Explore Patents

Title: The Innovations of David Berman: A Pioneer in X-ray Diffraction Technology

Introduction

David Berman, based in Kiryat Tivon, Israel, is an influential inventor known for his significant contributions to the field of X-ray diffraction technology. With an impressive portfolio of 18 patents, Berman has developed innovative methods that enhance the sensitivity and accuracy of high-resolution X-ray measurements, positioning him as a leader in his domain.

Latest Patents

Two of Berman's most recent patents exemplify his ingenuity:

1. **High-resolution X-ray diffraction measurement with enhanced sensitivity**: This method involves directing a converging beam of X-rays toward a sample surface with an epitaxial layer, then sensing the diffracted X-rays while resolving them by angle. The resulting diffraction spectrum features a peak and fringes due to the epitaxial layer, with the characteristic of the fringes analyzed to measure the relaxation of said layer.

2. **Enhancing accuracy of fast high-resolution X-ray diffractometry**: This technique also uses a converging beam of X-rays directed at a sample surface. It generates a diffraction spectrum which is corrected to account for non-uniform properties of the beam, thereby enhancing measurement accuracy.

Career Highlights

Throughout his career, David Berman has made substantial contributions while working with reputable organizations such as Jordan Valley Applied Radiation Ltd. and Jordan Valley Semiconductors Ltd. His innovative approach and expertise in X-ray diffraction have played a crucial role in refining measurement techniques in the semiconductor and radiation fields.

Collaborations

Berman has collaborated with notable professionals in the industry, including Boris Yokhin and Isaac Mazor. These partnerships have been instrumental in advancing their collective research, fostering an environment of innovation and knowledge exchange.

Conclusion

David Berman's extensive patents and innovative techniques highlight his significant impact on the field of X-ray diffraction technology. With 18 patents to his name, his work continues to influence the development of more accurate and sensitive measurement methods, solidifying his position as a leading inventor in this specialized area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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