The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2014

Filed:

Jul. 12, 2012
Applicants:

Boris Yokhin, Nazareth Illit, IL;

Isaac Mazor, Haifa, IL;

Alexander Krohmal, Haifa, IL;

Amos Gvirtzman, Moshav Zippori, IL;

Gennady Openganden, Kiryat Yam, IL;

David Berman, Tivon, IL;

Matthew Wormington, Littleton, CO (US);

Inventors:

Boris Yokhin, Nazareth Illit, IL;

Isaac Mazor, Haifa, IL;

Alexander Krohmal, Haifa, IL;

Amos Gvirtzman, Moshav Zippori, IL;

Gennady Openganden, Kiryat Yam, IL;

David Berman, Tivon, IL;

Matthew Wormington, Littleton, CO (US);

Assignee:

Jordan Valley Semiconductor Ltd., Migdal Ha'emek, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/20 (2006.01); G01N 23/203 (2006.01); G01N 23/207 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.


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