The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
Dec. 02, 2010
John Wall, Newton Aycliffe, GB;
David Jacques, Durham, GB;
Boris Yokhin, Nazareth Illit, IL;
Alexander Krokhmal, Haifa, IL;
Paul Ryan, Darlington, GB;
Richard Bytheway, Durham, GB;
David Berman, Tivon, IL;
Matthew Wormington, Littleton, CO (US);
John Wall, Newton Aycliffe, GB;
David Jacques, Durham, GB;
Boris Yokhin, Nazareth Illit, IL;
Alexander Krokhmal, Haifa, IL;
Paul Ryan, Darlington, GB;
Richard Bytheway, Durham, GB;
David Berman, Tivon, IL;
Matthew Wormington, Littleton, CO (US);
Jordan Valley Semiconductors Ltd., Migdal Haemek, IL;
Abstract
A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers are sensed simultaneously while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including at least a first diffraction peak due to the first layer and a second diffraction peak due to the second layer. The diffraction spectrum is analyzed so as to identify a characteristic of at least the second layer.