Hopewell Junction, NY, United States of America

Daniel Joseph Prager

This inventor holds 21 USPTO granted patents, primarily in Metal Gate Processing. Top assignees: Tokyo Electron Limited, International Business Machines Corporation, Timbre Technologies, Inc.. Active years: 2006-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel Joseph Prager. Retrieved from https://idiyas.com/inventor/daniel-joseph-prager

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 23.8

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 186(Granted Patents)


Company Filing History:


Years Active: 2006-2013

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Areas of Expertise:
MIMO Models
Metal Gate Structures
Lithography-Etch
Etching Process
Spacer Optimization
Wafer Uniformity
Dynamic Metrology
Optical Metrology
Profile Library
Feature Dimension Correction
Process Control
21 patents (USPTO):Explore Patents

Title: The Innovative Journey of Daniel Joseph Prager

Introduction

Daniel Joseph Prager, an inventive mind hailing from Hopewell Junction, NY, has made significant contributions to the field of technology, particularly in semiconductor processing. With a remarkable portfolio comprising 21 patents, Prager's work exemplifies the spirit of innovation that drives advancements in modern engineering.

Latest Patents

Among his latest innovations, Prager has developed groundbreaking technologies, including a method for contact processing utilizing multi-input/multi-output (MIMO) models. This invention describes systems and methods for creating Double Pattern (DP) structures on a patterned wafer in real-time using Dual Pattern Contact-Etch (DPCE) processing sequences. The intricate design involves multiple procedures such as contact-etch modeling and verification, enabling the creation of complex features like lines, trenches, and gate structures.

Additionally, his patent on a differential metal gate etching process details a method for etching a differential metal gate structure on a substrate. This advanced technique involves a metal gate layer over a high dielectric constant (high-k) dielectric layer, varying in thickness across different substrate regions. The process employs plasma etching with specific gases that enhance the intricacy of manufacturing in semiconductor devices.

Career Highlights

Prager's career has seen him associate with notable companies, including Tokyo Electron Limited and International Business Machines Corporation (IBM). His tenure in these leading organizations allowed him to refine his skills and contribute to pivotal advancements within the industry, showcasing his ability to innovate consistently.

Collaborations

Throughout his professional journey, Prager has had the opportunity to collaborate with esteemed colleagues like Merritt Funk and Asao Yamashita. These partnerships have fostered an environment of shared knowledge and creativity, further amplifying their contributions to technology and innovation.

Conclusion

Daniel Joseph Prager stands as a beacon of innovation in semiconductor processing. His extensive list of patents and collaborative efforts underline his commitment to advancing the field. As technology continues to evolve, Prager's work not only highlights his expertise but also inspires future generations of inventors and engineers in their pursuit of groundbreaking inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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