The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 23, 2010
Vinh Hoang Luong, Boise, ID (US);
Hiroyuki Takahashi, Tokyo, JP;
Akiteru Ko, Schenectady, NY (US);
Asao Yamashita, Tokyo, JP;
Vaidya Bharadwaj, Austin, TX (US);
Takashi Enomoto, Rensselaer, NY (US);
Daniel J. Prager, Hopewell Junction, NY (US);
Vinh Hoang Luong, Boise, ID (US);
Hiroyuki Takahashi, Tokyo, JP;
Akiteru Ko, Schenectady, NY (US);
Asao Yamashita, Tokyo, JP;
Vaidya Bharadwaj, Austin, TX (US);
Takashi Enomoto, Rensselaer, NY (US);
Daniel J. Prager, Hopewell Junction, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for etching a differential metal gate structure on a substrate is described. The differential metal gate structure includes a metal gate layer overlying a high dielectric constant (high-k) dielectric layer, wherein the metal gate layer comprises a different thickness at different regions on the substrate. The metal gate layer is patterned by using a plasma etching process, wherein at least one etch step includes forming plasma using a halogen-containing gas and at least one etch step includes forming plasma using an additive gas having as atomic constituents C, H, and F.