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For the Inventor, By the Inventor

Plano, TX, United States of America

Dan M Mosher

USPTO Granted Patents = 14

Average Co-Inventor Count = 2.5

ph-index = 10

Forward Citations = 468(Granted Patents)


Company Filing History:

goldMedal14 out of 29,256 
 
Texas Instruments Corporation
 patents

Years Active: 1991-2011

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14 patents (USPTO):Explore Patents
1. 7888196 - Trench isolation comprising process having multiple gate dielectric thicknesses and integrated circuits therefrom (2011-02-15),
2. 6804095 - Drain-extended MOS ESD protection structure (2004-10-12),
3. 6624487 - Drain-extended MOS ESD protection structure (2003-09-23),
4. 6620692 - Method of forming a metal oxide semiconductor transistor with self-aligned channel implant (2003-09-16),
5. 6548874 - Higher voltage transistors for sub micron CMOS processes (2003-04-15),
6. 6531355 - LDMOS device with self-aligned RESURF region and method of fabrication (2003-03-11),
7. 6521946 - Electrostatic discharge resistant extended drain metal oxide semiconductor transistor (2003-02-18),
8. 6483149 - LDMOS device with self-aligned resurf region and method of fabrication (2002-11-19),
9. 6211552 - Resurf LDMOS device with deep drain region (2001-04-03),
10. 5688337 - Temperature compensated photovoltaic array (1997-11-18),
11. 5256582 - Method of forming complementary bipolar and MOS transistor having power (1993-10-26),
12. 5181095 - Complementary bipolar and MOS transistor having power and logic (1993-01-19),
13. 5153697 - Integrated circuit that combines multi-epitaxial power transistors with (1992-10-06),
14. 5034337 - Method of making an integrated circuit that combines multi-epitaxial (1991-07-23),

Title: Dan M Mosher: Innovator in Integrated Circuit Technology

Introduction

Dan M Mosher is a prominent inventor based in Plano, TX (US), known for his significant contributions to the field of integrated circuit technology. With a total of 14 patents to his name, he has made remarkable advancements that enhance the functionality and reliability of electronic devices.

Latest Patents

Among his latest patents is a method for trench isolation comprising a process that utilizes multiple gate dielectric thicknesses. This innovative approach involves fabricating integrated circuits (ICs) with a first plurality of MOS transistors featuring a first gate dielectric of a specific thickness in designated regions, alongside a second plurality of MOS transistors with a different gate dielectric thickness in other regions. This method optimizes the performance of the transistors by ensuring that the first thickness is less than the second thickness.

Another notable patent is the drain-extended MOS ESD protection structure. This protection structure is designed to safely conduct charge from electrostatic discharge (ESD) at a terminal. It includes a pair of drain-extended metal-oxide-semiconductor (MOS) transistors that work together to provide significant gate-to-drain capacitance, ensuring that ESD events are effectively managed and safely conducted to the substrate.

Career Highlights

Dan M Mosher has built a successful career at Texas Instruments Corporation, where he has been instrumental in developing cutting-edge technologies. His work has not only advanced the field of integrated circuits but has also contributed to the overall progress of electronic engineering.

Collaborations

Throughout his career, Dan has collaborated with notable colleagues, including Cornelia H Blanton and Joe R Trogolo. These partnerships have fostered innovation and have led to the successful development of various technologies in the semiconductor industry.

Conclusion

Dan M Mosher's contributions to integrated circuit technology through his patents and work at Texas Instruments Corporation highlight his role as a key innovator in the field. His advancements continue to influence the development of reliable and efficient electronic devices.

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