The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2002
Filed:
May. 14, 1997
Applicant:
Inventors:
Dan M. Mosher, Plano, TX (US);
Taylor R. Efland, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7092 ;
U.S. Cl.
CPC ...
H01L 2/7092 ;
Abstract
A RESURF LDMOS transistor ( ) includes a RESURF region ( ) that is self-aligned to a LOCOS field oxide region ( ). The self-alignment produces a stable breakdown voltage BVdss by eliminating degradation associated with geometric misalignment and process tolerance variation.
Mosher, Dan. (2002). Ldmos device with self-aligned resurf region and method of fabrication (U.S. Patent No. 6483149). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6483149
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile