Richardson, TX, United States of America

Taylor R Efland

This inventor holds 75 USPTO granted patents and 1 published patent application, primarily in Power Semiconductor Devices (CPC class H01L). Top assignee: Texas Instruments Corporation. Active years: 1992-2015.

USPTO Granted Patents = 75 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 23

Forward Citations = 1,928(Granted Patents)

Forward Citations (Not Self Cited) = 1,893(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Dallas, TX (US) (2005)
  • Richardson, TX (US) (1992 - 2015)
  • Emerald Isle, NC (US) (2015)

Company Filing History:


Years Active: 1992-2015

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Areas of Expertise:
Power MOSFETs
LDMOS Technology
Integrated Circuits
High Voltage Transistors
Low Leakage Power Transistor
Thermally Enhanced Semiconductor
Digital CMOS Performance
Submicron Technology
Transistor Fabrication
Power Distribution Lines
Robust DEMOS Transistors
Circuit Integration
75 patents (USPTO):Explore Patents

Title: **Taylor R. Efland: Innovator in Power Integrated Circuits**

Introduction

Taylor R. Efland is a notable inventor based in Richardson, TX, recognized for his substantial contributions to the field of semiconductor technology. With an impressive portfolio of 75 patents, his work primarily focuses on innovations in power integrated circuits, particularly involving high voltage MOS transistors.

Latest Patents

Efland’s most recent patents illustrate his expertise in semiconductor devices. His innovations include a power integrated circuit featuring series-connected source substrate and drain substrate power MOSFETs. This advanced semiconductor device encompasses a high voltage MOS transistor characterized by a drain drift region positioned over a lower drain layer and channel regions that are laterally disposed at the top surface of the substrate. The designs also integrate RESURF trenches, which are effectively cut through the drain drift region and body region, both parallel and perpendicular to channel current flow. These trenches incorporate dielectric liners and electrically conductive RESURF elements. Furthermore, source contact metal is strategically placed over the body region and source regions, enhancing the overall functionality of the device.

Career Highlights

Efland serves as an inventor at Texas Instruments Corporation, a leading company in the semiconductor industry. His role involves extensive research and development, driving innovations that contribute to the company's competitive edge in power products.

Collaborations

Throughout his career, Efland has collaborated with esteemed colleagues including Sameer P. Pendharkar and Dale J. Skelton. These partnerships have resulted in the advancement of technologies that significantly impact the efficiency and capability of integrated circuits.

Conclusion

Taylor R. Efland’s remarkable achievements in the field of semiconductor technology underscore his position as a leading inventor. His contributions to power integrated circuits and collaboration with other innovators at Texas Instruments Corporation continue to shape the future of electronic devices and power management solutions.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
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