Richardson, TX, United States of America

Taylor R Efland

USPTO Granted Patents = 75 

Average Co-Inventor Count = 2.9

ph-index = 23

Forward Citations = 1,919(Granted Patents)

Forward Citations (Not Self Cited) = 1,893(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Dallas, TX (US) (2005)
  • Richardson, TX (US) (1992 - 2015)
  • Emerald Isle, NC (US) (2015)

Company Filing History:


Years Active: 1992-2015

Loading Chart...
Areas of Expertise:
Power Integrated Circuit
MOS Transistor
Lateral Drain-Extended MOSFET
N-Channel LDMOS
Robust DEMOS Transistors
Thermally Enhanced Semiconductor Chip
Low Leakage Power Transistor
Integrated Circuit Diode
Digital CMOS Performance
High Voltage Transistors
Distributed Power Device
Synchronous-Buck Power Stage
75 patents (USPTO):Explore Patents

Title: **Taylor R. Efland: Innovator in Power Integrated Circuits**

Introduction

Taylor R. Efland is a notable inventor based in Richardson, TX, recognized for his substantial contributions to the field of semiconductor technology. With an impressive portfolio of 75 patents, his work primarily focuses on innovations in power integrated circuits, particularly involving high voltage MOS transistors.

Latest Patents

Efland’s most recent patents illustrate his expertise in semiconductor devices. His innovations include a power integrated circuit featuring series-connected source substrate and drain substrate power MOSFETs. This advanced semiconductor device encompasses a high voltage MOS transistor characterized by a drain drift region positioned over a lower drain layer and channel regions that are laterally disposed at the top surface of the substrate. The designs also integrate RESURF trenches, which are effectively cut through the drain drift region and body region, both parallel and perpendicular to channel current flow. These trenches incorporate dielectric liners and electrically conductive RESURF elements. Furthermore, source contact metal is strategically placed over the body region and source regions, enhancing the overall functionality of the device.

Career Highlights

Efland serves as an inventor at Texas Instruments Corporation, a leading company in the semiconductor industry. His role involves extensive research and development, driving innovations that contribute to the company's competitive edge in power products.

Collaborations

Throughout his career, Efland has collaborated with esteemed colleagues including Sameer P. Pendharkar and Dale J. Skelton. These partnerships have resulted in the advancement of technologies that significantly impact the efficiency and capability of integrated circuits.

Conclusion

Taylor R. Efland’s remarkable achievements in the field of semiconductor technology underscore his position as a leading inventor. His contributions to power integrated circuits and collaboration with other innovators at Texas Instruments Corporation continue to shape the future of electronic devices and power management solutions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…