The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Nov. 22, 2002
John Lin, Chelmsford, MA (US);
Philip L. Hower, Concord, MA (US);
Taylor R. Efland, Richardson, TX (US);
Sameer Pendharkar, Richardson, TX (US);
Vladimir Bolkhovsky, Framingham, MA (US);
John Lin, Chelmsford, MA (US);
Philip L. Hower, Concord, MA (US);
Taylor R. Efland, Richardson, TX (US);
Sameer Pendharkar, Richardson, TX (US);
Vladimir Bolkhovsky, Framingham, MA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The concept of the present invention describes a semiconductor device with a junctionbetween a lightly doped regionand a heavily doped region, wherein the junction has an elongated portionand curved portions. The doping concentration of the lightly doped region is configured so that it exhibits higher resistivity in the proximityof the curved portion by an amount suitable to lower the electric field strength during device operation and thus to offset the increased field strength caused by the curved portion. As a consequence, the device breakdown voltage in the curved junction portion becomes equal to or greater than the breakdown voltage in the linear portion.