Philip Leland Hower

This inventor holds 48 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in High Voltage Transistors. Top assignees: Texas Instruments Corporation, Unitrode Corporation. Active years: 1985-2021.

USPTO Granted Patents = 48 (Patent Applications = 2)

% Patents Active = 100.0

EPO Patents = 1

Average Co-Inventor Count = 3.2

ph-index = 7

Forward Citations = 223(Granted Patents)

Company Filing History:

45 out of 29,869

Texas Instruments Corporation

Years Active: 1985-2021

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Areas of Expertise:

High Voltage Transistors

Lateral MOSFET

DMOS Technology

Thermoelectric Structures

Integrated Circuit

Floating Isolation

Bipolar CMOS

JFET

Power Devices

Drain Extension

Parametric Trimming

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11152459 - Lateral MOSFET with buried drain extension layer (2021-10-19),

2. 10937905 - Transistor having double isolation with one floating isolation (2021-03-02),

3. 10601422 - Integrated high-side driver for P-N bimodal power device (2020-03-24),

4. 10535731 - Lateral MOSFET with buried drain extension layer (2020-01-14),

5. 10446734 - Vertical thermoelectric structures (2019-10-15),

6. 10319809 - Structures to avoid floating resurf layer in high voltage lateral devices (2019-06-11),

7. 9985095 - Lateral MOSFET with buried drain extension layer (2018-05-29),

8. 9947784 - High voltage lateral extended drain MOS transistor with improved drift layer contact (2018-04-17),

9. 9876071 - Structures to avoid floating RESURF layer in high voltage lateral devices (2018-01-23),

10. 9843322 - Integrated high-side driver for P-N bimodal power device (2017-12-12),

11. 9831320 - High voltage lateral DMOS transistor with optimized source-side blocking capability (2017-11-28),

12. 9806190 - High voltage drain extension on thin buried oxide SOI (2017-10-31),

13. 9793375 - High voltage lateral DMOS transistor with optimized source-side blocking capability (2017-10-17),

14. 9543149 - High voltage lateral extended drain MOS transistor with improved drift layer contact (2017-01-10),

15. 9508869 - High voltage depletion mode N-channel JFET (2016-11-29),

Title: The Legacy of Philip Leland Hower

Introduction: Philip Leland Hower, a distinguished inventor hailing from Concord, MA, has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: Philip Leland Hower holds several patents in various industries, showcasing his versatility and creativity in developing new technologies to solve complex problems.

Career Highlights: Throughout his illustrious career, Philip Leland Hower has been recognized for his innovative spirit and dedication to pushing the boundaries of what is possible. His work has revolutionized multiple sectors, leaving a lasting impact on the world of invention.

Collaborations: Philip Leland Hower has collaborated with leading experts in the field, fostering a culture of innovation and knowledge-sharing that has led to the development of cutting-edge solutions and technologies.

Conclusion: Philip Leland Hower's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, inspiring generations to come.