The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2017
Filed:
Feb. 02, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Philip Leland Hower, Concord, MA (US);
Sameer Pendharkar, Allen, TX (US);
Marie Denison, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 27/088 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/266 (2013.01); H01L 27/088 (2013.01); H01L 29/063 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0634 (2013.01); H01L 29/0642 (2013.01); H01L 29/0646 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 21/2253 (2013.01);
Abstract
An integrated circuit and method having an extended drain MOS transistor with a buried drift region, a drain diffused link, a channel diffused link, and an isolation link which electrically isolated the source, where the isolation diffused link is formed by implanting through segmented areas to dilute the doping to less than two-thirds the doping in the drain diffused link.