The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Jan. 04, 2006
Sameer Pendharkar, Dallas, TX (US);
Ramanathan Ramani, Richardson, TX (US);
Taylor R. Efland, Richardson, TX (US);
Sameer Pendharkar, Dallas, TX (US);
Ramanathan Ramani, Richardson, TX (US);
Taylor R. Efland, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.