The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Apr. 26, 2002
David B. Scott, Plano, TX (US);
Dan M. Mosher, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A transistor ( ) comprising a gate conductor ( ) and a gate insulator ( ) separating the gate conductor from a semiconductor material ( ) having a first conductivity type. The transistor further comprises a drain region ( ) having the first conductivity type. The transistor further comprises an angular implanted region ( ) having a second conductivity type complementary of the first conductivity type and having an angular implanted region edge ( ) underlying the gate conductor, and the transistor includes a source region ( ) formed at least in part within the angular implanted region. Finally, a transistor channel ( ) is defined between an edge ( ) of the source region proximate the gate conductor and the angular implanted region edge ( ) underlying the gate conductor.