The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Jul. 01, 1999
Applicant:
Inventors:
Dan M. Mosher, Plano, TX (US);
Taylor R. Efland, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/1336 ;
Abstract
A RESURF LDMOS transistor ( ) includes a RESURF region ( ) that is self-aligned to a LOCOS field oxide region ( ). The self-alignment produces a stable breakdown voltage BVdss by eliminating degradation associated with geometric misalignment and process tolerance variation.